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://mlq.quantumexcellence.org The following hiring conditions apply: • All researchers recruited in MLQ must be doctoral candidates (i.e. not already in possession of a doctoral degree at the date of the recruitment
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) Accounting for drop size distribution variability across scales, and notably the one occurring below radar observation scales; (ii) Better understanding and quantifying the wind drift effect, i.e
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occurring below radar observation scales; (ii) Better understanding and quantifying the wind drift effect, i.e. the advection of raindrops are advected during their fall from radar observation elevations
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Mines Paris - PSL, Centre PERSEE | Sophia Antipolis, Provence Alpes Cote d Azur | France | 28 days ago
of energy networks and the electrification of new usages that results in increasing demand by consumers (i.e. electric vehicles charging). Furthermore, the integration of high shares of renewables (wind
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. Similar approach will be applied to the design and characterization of logic gates (i.e., NAND, XOR, NOT, …). 3. Characterization of FeFET-based Logic/Memory Elements (M13-M18) • The goal of this task is to
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down to a nanoparticle enclosed onto a vacuum chambre, while being optically levitated (i.e. trapped) at the focal spot of a CW laser. The levitated nanoparticle will then describe mechanical
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Institut Lumière Matière ILM- UMR 5306 CNRS / Université Claude Bernard Lyon 1 | Villeurbanne, Rhone Alpes | France | 4 days ago
for early disease diagnosis and biomarker monitoring due to their sensitivity in detecting small variations in mechanical properties (i.e. changes in mass, density, rigidity, viscosity) resulting from
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-gel chemistry and renewable resources, i.e. cellulose or chitosan. This project will focus particularly on hydrophobic thin films, in order to limit the affinity for water and the phenomena of water
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lithography, optical microscopy, nanometrology (i.e. profilometry, AFM, SEM), and image processing. 2) Measure and analyze the propagation of MHz to GHz ultrasonic waves in the fabricated samples using laser
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of GeSn, where a direct band gap material (i.e. high efficiency for the optical emission) is obtained at Sn contents of >9 at.%. Prototypes of GeSn photodetectors, lasers, and LEDs have been fabricated from